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Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studiedwith resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti andNi L2,3-edges. We find that the Ni doping shifts the valence band (VB) ofpristine SrTiO$_3$ towards the Fermi level (p-doping) and reduces its band gap.This is accompanied by an upward energy shift of the Ti t2g-derived mobileelectron system (MES). Thereby, the in-plane dxy-derived bands reduce theembedded electron density, as evidenced by progressive reduction of their Fermimomentum with the Ni concentration, and the out-of-plane dxz/yz-derived bandsdepopulate, making the MES purely two-dimensional. Furthermore, the Ti and NiL2,3-edge resonant photoemission is used to identify the Ni 3d impurity statein the vicinity of the valence-band maximum, and decipher the full spectrum ofthe VO-induced in-gap states originating from the Ni atoms, Ti atoms, and fromtheir hybridized orbitals. Our experimental information about the dependence ofthe valence bands, MES and in-gap states in Ni-doped SrTiO$_3$ may helpdevelopment of this material towards its device applications associated withthe reduced optical band gap.

Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$