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Group IV vacancy color centers in diamond are promising spin-photoninterfaces with strong potential for applications for photonic quantumtechnologies. Reliable methods for controlling and stabilizing their chargestate are urgently needed for scaling to multi-qubit devices. Here, wemanipulate the charge state of silicon vacancy (SiV) ensembles by combiningluminescence and photo-current spectroscopy. We controllably convert the chargestate between the optically active SiV$^-$ and dark SiV$^{2-}$ with MHz ratesand 90% contrast by judiciously choosing the local potential applied toin-plane surface electrodes and the laser excitation wavelength. We observeintense SiV$^-$ photoluminescence under hole-capture, measure the intrinsicconversion time from the dark SiV$^{2-}$ to the bright SiV$^-$ to be36.4(6.7)ms and demonstrate how it can be enhanced by a factor of $10^5$ viaoptical pumping. Moreover, we obtain new information on the defects thatcontribute to photo-conductivity, indicating the presence of substitutionalnitrogen and divacancies.

Fast optoelectronic charge state conversion of silicon vacancies in diamond