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A wide-bandwidth and low-noise amplification chain in the microwave regime iscrucial for the efficient read-out of quantum systems based on superconductingdetectors, such as Microwave Kinetic Inductance Detectors (MKIDs), TransitionEdge Sensors (TESs), Magnetic Microcalorimeters (MMCs), and RF cavities, aswell as qubits. Kinetic Inductance Travelling Wave Parametric Amplifiers(KI-TWPAs) operated in a three-wave mixing fashion have demonstratedexceptional dynamic range and low-noise performance, approaching the quantumlimit. These amplifiers can be fabricated using a single layer of a highkinetic inductance film as weakly dispersive artificial transmission lines,with the ability to control the phase-matched bandwidth through dispersionengineering. In this study, we present the optimisation of the rfsputter-deposition process of NbTiN films using a Nb80%T20 target, with thegoal of achieving precise control over film characteristics, resulting in highkinetic inductance while maintaining a high transition temperature. Theparameter landscape related to the different sputtering conditions, such aspressure, power, and nitrogen flow, has been explored and the film thicknesshas been used as a fine-tuning parameter to adjust the properties of the finalNbTiN films used for the fabrication of KI-TWPAs. As a final result, we haveobtained a NbTiN film with a kinetic inductance of 8.5 pH/sq which we haveexploited to fabricate KI-TWPA prototype devices, showing promisingamplification performance.

High kinetic inductance NbTiN films for quantum limited travelling wave parametric amplifiers