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The ability to modulate the spin-orbit (SO) interaction is crucial forengineering a wide range of spintronics-based quantum devices, extending fromstate-of-the-art data storage to materials for quantum computing. The use ofproximity-induced effects for this purpose may become the mainstream approach,whereas their experimental verification using angle-resolved photoelectronspectroscopy (ARPES) has so far been elusive. Here, using the advantages ofsoft-X-ray ARPES on its probing depth and intrinsic resolution inthree-dimensional momentum k, we identify a distinct modulation of the SOinteraction in a van der Waals semiconductor (MoSe2) proximitized to a high-Zmetal (Pb), and measure its variation through the k-space. The strong SO fieldfrom Pb boosts the SO splitting by up to 30% at the H-point of the bulkBrillouin zone, the spin-orbit hotspot of MoSe2. Tunability of the splittingvia the Pb thickness allows its tailoring to particular applications inemerging quantum devices.

k-dependent proximity-induced modulation of spin-orbit interaction in MoSe2 interfaced with amorphous Pb