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We present a predictive and general approach to investigate near-field energytransfer processes between localized defects in semiconductors, which couplesfirst principle electronic structure calculations and a nonrelativistic quantumelectrodynamics description of photons in the weak-coupling regime. We applyour approach to investigate an exemplar point defect in an oxide, the F centerin MgO, and we show that the energy transfer from a magnetic source, e.g., arare earth impurity, to the vacancy can lead to spin non conserving long-livedexcitation that are dominant processes in the near field, at distances relevantto the design of photonic devices and ultra-high dense memories. We also definea descriptor for coherent energy transfer to predict geometrical configurationsof emitters to enable long-lived excitations, that are useful to design opticalmemories in semiconductor and insulators.

First-Principle Investigation Of Near-Field Energy Transfer Between Localized Quantum Emitters in Solids