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Holes in silicon quantum dots are promising for spin qubit applications dueto the strong intrinsic spin-orbit coupling. The spin-orbit coupling producescomplex hole-spin dynamics, providing opportunities to further optimize spinqubits. Here, we demonstrate a singlet-triplet qubit using hole states in aplanar metal-oxide-semiconductor double quantum dot. We observe rapid qubitcontrol with singlet-triplet oscillations up to 400 MHz. The qubit exhibitspromising coherence, with a maximum dephasing time of 600 ns, which is enhancedto 1.3 us using refocusing techniques. We investigate the magnetic fieldanisotropy of the eigenstates, and determine a magnetic field orientation toimprove the qubit initialisation fidelity. These results present a step forwardfor spin qubit technology, by implementing a high quality singlet-triplethole-spin qubit in planar architecture suitable for scaling up to 2D arrays ofcoupled qubits.

A singlet-triplet hole-spin qubit in MOS silicon