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For epitaxial Sr$_3$Ru$_2$O$_7$ films grown by pulsed laser deposition, wereport a combined structural and magnetotransport study of thin films and Hallbar devices patterned side-by-side on the same film. Structural properties ofthese films are investigated using X-ray diffraction and high-resolutiontransmission electron microscopy, and confirm that these films are epitaxiallyoriented and nearly phase pure. For magnetic fields applied along the $c-$axis,a positive magnetoresistance of 10% is measured for unpatternedSr$_3$Ru$_2$O$_7$ films, whereas for patterned Hall bar devices of channelwidths of $10$ and $5\, \mu$m, magnetoresistance values of 40% and 140% arefound, respectively. These films show switching behaviors from positive tonegative magnetoresistance that are controlled by the direction of the appliedmagnetic field. The present results provide a promising route for achievingstable epitaxial synthesis of intermediate members of correlated layeredstrontium ruthenates, and for the exploration of device physics in thin filmsof these compounds.

Magnetotransport Properties of Epitaxial Films and Hall Bar Devices of the Correlated Layered Ruthenate Sr$_3$Ru$_2$O$_7$