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Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmostimportance to a plethora of applications such as night vision, thermal sensing,autonomous vehicles, free-space communication, and spectroscopy. To this end,leveraging the ubiquitous silicon-based processing has emerged as a powerfulstrategy that can be accomplished through the use of group IV germanium-tin(GeSn) alloys. Indeed, due to their compatibility with silicon and theirtunable bandgap energy covering the entire MWIR range, GeSn semiconductors arefrontrunner platforms for compact and scalable MWIR technologies. However, theGeSn large lattice parameter has been a major hurdle limiting the quality ofGeSn epitaxy on silicon wafers. Herein, it is shown that sub-20 nm Ge nanowires(NWs) provide effective compliant substrates to grow Ge$_{1-x}$Sn$_{x}$ alloyswith a composition uniformity over several micrometers with a very limitedbuild-up of the compressive strain. Ge/Ge$_{1-x}$Sn$_{x}$ core/shell NWs withSn content spanning the 6 to 18 at.$\%$ range are demonstrated and integratedin photoconductive devices exhibiting a high signal-to-noise ratio at roomtemperature and a tunable cutoff wavelength covering the 2.0 $\mu$m to 3.9$\mu$m range. Additionally, the processed NW-based detectors were used inuncooled imagers enabling the acquisition of high-quality images under bothbroadband and laser illuminations without a lock-in technique.

Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires