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CdTe is the most commercially successful thin-film photovoltaic technology todate. The recent development of Se-alloyed CdSe$_{x}$Te$_{1-x}$ layers in CdTesolar cells has led to higher device efficiencies, due to a lowered bandgapimproving the photocurrent, improved voltage characteristics and longer carrierlifetimes. Evidence from cross-sectional electron microscopy is widely believedto indicate that Se passivates defects in CdSe$_{x}$Te$_{1-x}$ solar cells, andthat this is the reason for better lifetimes and voltages in these devices.Here, we utilise spatially resolved photoluminescence measurements ofCdSe$_{x}$Te$_{1-x}$ thin films on glass to study the effects of Se on carrierrecombination in the material, isolated from the impact of conductiveinterfaces and without the need to prepare cross-sections through the samples.We find further evidence to support Se passivation of grain boundaries, butalso identify an associated increase in below-bandgap photoluminescence thatindicates the presence of Se-enhanced luminescent defects. Our results showthat Se treatment, in tandem with Cl passivation, does increase radiativeefficiencies. However, the simultaneous enhancement of defects within the graininteriors suggests that although it is overall beneficial, Se incorporation maystill ultimately limit the maximum attainable efficiency ofCdSe$_{x}$Te$_{1-x}$ solar cells.

Spatially resolved photoluminescence analysis of Se passivation and defect formation in CdSe$_{x}$Te$_{1-x}$ thin films