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Low Gain Avalanche Detectors (LGADs) are silicon semiconductor sensors withan implanted thin p-doped multiplication layer that is designed to provide lowgain. Most importantly, LGADs are specifically engineered to provide excellentspatial and temporal resolution simultaneously. The technology shows promisingprospects of fulfilling the 4D tracking requirements of future high energyphysics experiments. Micron Semiconductor Ltd. has fabricated LGADs with anactive thickness of 50 $\mu$m. The electrical and timing performance has beenmeasured and compared with devices fabricated at IMB-CNM for reference. 50$\mu$m thin LGADs by Micron Semiconductor Ltd. were measured to have a timingresolution in the region of 30 ps using a dedicated setup involving minimumionising particles produced by Sr-90. Specifically, the best timing resolutionof 26.5 ps was measured at a bias voltage of 200 V at -30{\deg}C.

26.5 ps Time Resolution Using 50 {\mu}m Low Gain Avalanche Detectors Fabricated by Micron Semiconductor Ltd