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Cesium lead bromide (CsPbBr3) is a widely used emitter for perovskitelight-emitting diodes (PeLEDs), benefiting from its large carrier mobility,high color purity and good thermal stability. However, the three-dimensionalCsPbBr3 films encounter challenges due to their massive intrinsic defects andweak exciton binding effect, which limited their electroluminescenceefficiency. To address this issue, the prevailing approach is to confinecarriers by reducing dimensionality or size. Nonetheless, this method resultsin an increase in surface trap states due to the larger surface-to-volume ratioand presents difficulties in carrier injection and transport after reducinglattice splitting to smaller sizes. Here, we successfully achieved propercontrol over film crystallization by introducing sodium ions, which facilitatethe epitaxial growth of zero-dimensional Cs4PbBr6 on the surface of CsPbBr3,forming large grain matrixes where CsPbBr3 is encapsulated by Cs4PbBr6.Notably, the ions-induced epitaxial growth enables the CsPbBr3 emitter withsignificantly reduced trap states, and generates coarsened nanocomposites ofCsPbBr3&Cs4PbBr6 with grain size that surpass the average thickness of the thinperovskite film, resulting in a wavy surface conducive to light out-coupling.Additionally, another additive of formamidinium chloride was incorporated toassist the growth of nanocomposites with larger size and lower defects as wellas better carrier injection and transportation. As a result, our demonstratedPeLEDs based on the coarsened nanocomposites exhibit low nonradiativerecombination, enhanced light extraction and well-balanced carriertransportation, leading to high-performance devices. The champion deviceachieved an external quantum efficiency of 31.0% at the emission peak of 521 nmwith a narrow full width at half-maximum (FWHM) of 18 nm.

Ions-induced Epitaxial Growth of Perovskite Nanocomposites for Highly Efficient Light-Emitting Diodes with EQE Exceeding 30%