English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The growth of bilayers of two-dimensional (2D) materials on conventional 3Dsemiconductors results in 2D/3D hybrid heterostructures, which can provideadditional advantages over more established 3D semiconductors while retainingsome specificities of 2D materials. Understanding and exploiting thesephenomena hinge on knowing the electronic properties and the hybridization ofthese structures. Here, we demonstrate that rhombohedral-stacked bilayer (ABstacking) can be obtained by molecular beam epitaxy growth of tungstendiselenide (WSe2) on gallium phosphide (GaP) substrate. We confirm the presenceof 3R-stacking of the WSe2 bilayer structure using scanning transmissionelectron microscopy (STEM) and micro-Raman spectroscopy. Also, we reporthigh-resolution angle-resolved photoemission spectroscopy (ARPES) on ourrhombohedral-stacked WSe2 bilayer grown on GaP(111)B substrate. Our ARPESmeasurements confirm the expected valence band structure of WSe2 with the bandmaximum located at the gamma point of the Brillouin zone. The epitaxial growthof WSe2 on GaP(111)B heterostructures paves the way for further studies of thefundamental properties of these complex materials, as well as prospects fortheir implementation in devices to exploit their promising electronic andoptical properties.

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure