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Physics based numerical simulation has been carried out to probe the sub-gapdensity of states (DOS) and underlying electron transport properties ofamorphous oxide based thin film transistors (TFTs). The DOS model of TFTsconsists of exponential band tails, Gaussian shallow donor levels and deepacceptor states. Electrical transport and various TFT performance parametersare found to be critically dependent on the sub-gap DOS. At low gate bias, whenFermi level lies below the conduction band mobility edge, defect statesmediated trap limited conduction is found to be the dominant transportmechanism. However, at relatively higher gate bias, percolation conductionabove the mobility edge becomes prevalent. Such possible crossover of electrontransport is well corroborated by gate bias dependent band bending and inducedfree electron density in the channel layer. Such studies are important tounravel the critical role of sub-gap DOS on the electrical performance andcharge transport processes of disordered amorphous oxide TFTs.

Numerical simulation of defect states and electron transport mechanisms in amorphous oxide thin film transistors