English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We study the origin of bimodal emission in AlGaN/AlN QD superlatticesdisplaying high internal quantum efficiency (around 50%) in the 230-300 nmspectral range. The secondary emission at longer wavelengths is linked to thepresence of cone-like defects starting at the first AlN buffer/superlatticeinterface and propagating vertically. These defects are associated with adislocation that produces strong shear strain, which favors the formation of30{\deg} faceted pits. The cone-like structures present Ga enrichment at theboundary facets and larger QDs within the defect. The bimodality is attributedto the differing dot size/composition within the defects and at the defectboundaries, which is confirmed by the correlation of microscopy results andSchr\"odinger-Poisson calculations.

Effect of extended defects on AlGaN QDs for electron-pumped UV-emitters