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The development of two-dimensional (2D) room temperature magnets is of greatsignificance to the practical application of spintronic devices. However, thenumber of synthesized intrinsic 2D magnets is limited and the performances ofthem are not satisfactory, e.g. typically with low Curie temperature and poorenvironmental stability. Magnetic modulation based on developed 2D materials,especially non-magnetic 2D materials, can bring us new breakthroughs. Herein,we report room temperature ferromagnetism in halogenated MoS2 monolayer underthe synergistic effect of strain engineering and charge injection, and thecombined implementation of these two processes is based on the halogenation ofMoS2. The adsorbed halogen atoms X (X = F, Cl, and Br) on the surface leads tolattice superstretching and hole injection, resulting in MoS2 monolayerexhibiting half-metallic properties, with one spin channel being gapless in theband structure. The Curie temperature of halogenated MoS2 monolayer is 513~615K, which is much higher than the room temperature. In addition, large magneticanisotropy energy and good environmental stability make halogenated MoS2display great advantages in practical spintronic nanodevices.

Turning non-magnetic two-dimensional molybdenum disulfide into room  temperature magnets by the synergistic effect of strain engineering and  charge injection