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The search for a two-dimensional material that simultaneously fulfills someproperties for its use in spintronics and optoelectronics, i.e., a suitablebandgap with high in-plane carrier mobility and good environmental stability,is the focus of intense current research. If magnetism is also present, itsrange of utility is considerably expanded. One of the promising materialsfulfilling these features is Bi$_2$O$_2$Se, a non van-der-Waals system whosemonolayer has been recently obtained. This study addresses the structure andelectronic properties of different monolayers that could be obtainedexperimentally. It is observed that these monolayers are very sensitive to theintroduction of "extra" electrons, changing their electronic character fromsemiconductor to conductor. Furthermore, we investigate how the properties ofeach studied monolayer change when the system is doped with magnetic atoms. Theresult is that the doping introduces bands of low dispersion caused by the dorbitals of the impurities that can hybridize with the oxygen and bismuth atomsin the monolayer. This strongly modifies the electronic properties of thematerial, producing changes in the valence of certain Bi atoms which can inducea symmetry breaking in the perpendicular plane. Such phenomena lead to metallicor semiconducting characteristics, depending of metal doping.

Tailoring electronic properties on Bi$_2$O$_2$Se under surface modification and magnetic doping