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Magnetic tunnel junctions (MTJs) are key components of spintronic devices,such as magnetic random-access memories. Normally, MTJs consist of twoferromagnetic (FM) electrodes separated by an insulating barrier layer. Theirkey functional property is tunneling magnetoresistance (TMR) that is a changein MTJ's resistance when magnetization of the two electrodes alters fromparallel to antiparallel. Here, we demonstrate that TMR can occur in MTJs witha single FM electrode, provided that the counter electrode is anantiferromagnetic (AFM) metal that supports a spin-split band structure and/ora N\'eel spin current. Using RuO$_{2}$ as a representative example of suchantiferromagnet and CrO$_{2}$ as a FM metal, we design all-rutileRuO$_{2}$/TiO$_{2}$/CrO$_{2}$ MTJs to reveal a non-vanishing TMR. Ourfirst-principles calculations predict that magnetization reversal in CrO$_{2}$significantly changes conductance of the MTJs stacked in the (110) or (001)planes. The predicted giant TMR effect of about 1000% in the (110) orientedMTJs stems from spin-dependent conduction channels in CrO$_{2}$ (110) andRuO$_{2}$ (110), whose matching alters with CrO$_{2}$ magnetizationorientation, while TMR in the (001) oriented MTJs originates from the N\'eelspin currents and different effective TiO$_{2}$ barrier thickness for the twomagnetic sublattices that can be engineered by the alternating deposition ofTiO$_{2}$ and CrO$_{2}$ monolayers. Our results demonstrate a possibility of asizable TMR in MTJs with a single FM electrode and offer a practical test forusing the altermagnet RuO$_{2}$ in functional spintronic devices.

Tunneling magnetoresistance in magnetic tunnel junctions with a single ferromagnetic electrode