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Indium tin oxide (ITO) film, which is the most commonly used transparentconductive film (TCF), has traditionally been believed to be transparent in thevisible spectrum but to reflect infrared (IR) light beyond the plasmawavelength (${\lambda}_p$). However, our theoretical analysis challenges thisnotion by demonstrating that an ultrathin ITO TCF that is thinner than thelight's penetration depth, can overcome the transmission barrier at${\lambda}_p$. To validate the theoretical modeling, we have successfullyfabricated ITO films that, despite having ${\lambda}_p \approx$ 1 ${\mu}$m,remain transparent from 400 nm to 20 ${\mu}$m. This represents the broadesttransparency range ever reported for any In$_2$O$_3$-based TCF. The 10-nm-thickITO TCFs have high visible transmittance (91.0% at 550 nm), low resistivity (5$\times$ 10$^{-4}$ ${\Omega}\cdot$ cm), and good IR transmittance (averaging60% over 1.35 $\unicode{x2013}$ 18.35 ${\mu}$m). Their IR transparencyfacilitates radiative cooling of the underlying circuitry. When an operationalresistor is enclosed by commercial ITO TCFs that are 140 nm thick, itstemperature increases. However, using 10-nm-thick ITO TCFs instead of thecommercial ones can completely avoid this temperature rise. Moreover, attachinga silver grid to a 10-nm-thick ITO TCF can reduce the effective sheetresistance to ~10 ${\Omega}/\square$ at the expense of only ~3% transmittance.This development paves the way for large-scale applications that require lowsheet resistance and far-IR transparency.

Breaking Through the Plasma Wavelength Barrier to Extend the Transparency Range of Ultrathin Indium Tin Oxide Films into the Far Infrared