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The fractional quantum anomalous Hall effect (FQAHE), the analog of thefractional quantum Hall effect1 at zero magnetic field, is predicted to existin topological flat bands under spontaneous time-reversal-symmetry breaking.The demonstration of FQAHE could lead to non-Abelian anyons which form thebasis of topological quantum computation. So far, FQAHE has been observed onlyin twisted MoTe2 (t-MoTe2) at moire filling factor v > 1/2. Graphene-basedmoire superlattices are believed to host FQAHE with the potential advantage ofsuperior material quality and higher electron mobility. Here we report theobservation of integer and fractional QAH effects in a rhombohedral pentalayergraphene/hBN moire superlattice. At zero magnetic field, we observed plateausof quantized Hall resistance Rxy = h/(ve^2) at filling factors v = 1, 2/3, 3/5,4/7, 4/9, 3/7 and 2/5 of the moire superlattice respectively. These featuresare accompanied by clear dips in the longitudinal resistance Rxx. In addition,at zero magnetic field, Rxy equals 2h/e^2 at v = 1/2 and varies linearly withthe filling factor-similar to the composite Fermi liquid (CFL) in thehalf-filled lowest Landau level at high magnetic fields. By tuning the gatedisplacement field D and v, we observed phase transitions from CFL and FQAHstates to other correlated electron states. Our graphene system provides anideal platform for exploring charge fractionalization and (non-Abelian) anyonicbraiding at zero magnetic field, especially considering a lateral junctionbetween FQAHE and superconducting regions in the same device.

Fractional Quantum Anomalous Hall Effect in a Graphene Moire Superlattice