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Van der Waals heterostructures based on TMDC semiconducting materials haveemerged as promising materials due to their spin-valley properties efficientlycontrived by the stacking-twist angle. The twist angle drastically alters theinterlayer excitonic response by determining the spatial modulation, confiningmoir\'e potential, and atomic reconstruction in those systems. Nonetheless, theimpact of the interlayer twist angle on the band alignment of the monolayerscomposing the heterostructure has received scant attention in the currentresearch. Here, we systematically investigate the twist-angle dependence ofintra- and inter-layer excitons in twisted WSe2/MoSe2 heterobilayers. Byperforming photoluminescence excitation spectroscopy, we identify thetwist-angle dependence of interlayer emission response, where an energyredshift of about 100 meV was observed for increasing twist angles. The appliedmicroscopic theory predicts, on the contrary, a blueshift, which suggests thatadditional features, such as atomic reconstruction, may also surpass themoir\'e potential confinement. Those findings also prompt the effects ofdielectric screening by addressing the redshift response to the stacking layerorder. Furthermore, our findings support the evidence of a band offsetdependence on the twist angle for the adjacent monolayers composing theheterobilayer system. Our fundamental study of exciton resonances deepens thecurrent understanding of the physics of twisted TMDC heterostructures and pavesthe way for future experiments and theoretical works.

Twist Angle Dependence of Exciton Resonances in WSe$_2$/MoSe$_2$ Moir\'e Heterostructures