English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Trilayer graphene exhibits valley-protected gapless states when the stackingorder changes from ABC to CBA and a gate voltage is applied to outer layers.Some of these states survive strong distortions of the trilayer. For example,they persist when the outer layers are partially devoid yielding a system oftwo trilayers of different stacking order connected by a strip of a singlegraphene layer. Here we investigate how these states respond to anotherperturbation, i.e., the presence of magnetic defects, which we model aspi-vacancies. We show that the gap states hybridize with the defect states andstrongly spin-split. More importantly, it is demonstrated that by changing thegate voltage value one can change the spin density of the gap states and thecorresponding currents at the Fermi level.

Controlling spin polarization of gapless states in defected trilayer graphene with a gate voltage