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Photodetectors that are sensitive in shortwave infrared (SWIR) range (1 um -2 um) are of significant interest for applications in 3D, night and adverseweather imaging, machine vision and autonomous driving, among others. Currentlyavailable technologies in the SWIR rely on costly epitaxial semiconductors thatare not monolithically integrated with CMOS electronics. Solution-processedquantum dots can address this challenge by enabling low-cost manufacturing andsimple monolithic integration on silicon in a back-end-of-line (BEOL) process.To date, colloidal quantum dot (CQD) materials to access the SWIR are mostlybased on lead sulfide (PbS) and mercury telluride (HgTe) compounds, imposingmajor regulatory concerns and impeding their deployment in consumer electronicsdue to toxicity concerns. Here we report a new synthesis method forenvironmentally-friendly silver telluride (Ag2Te) quantum dots and theirapplication in high-performance SWIR photodetectors. The CQD photodetectorstack employs materials compliant with the Restriction of Hazardous Substance(RoHS) directives and is sensitive in the spectral range from 350 nm - 1600 nm.The room-temperature detectivity is of the order 1012 Jones, the 3dB bandwidthis in excess of 0.1 MHz and the linear dynamic range is over 118 dB. We alsorealize a monolithically integrated SWIR imager based on solution processed,heavy-metal-free materials, thus paving the way of this technology to consumerelectronics market.

Silver Telluride Colloidal Quantum Dot Infrared Photodetectors and Image Sensors