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Nb-based circuits have broad applications in quantum-limited photondetectors, low-noise parametric amplifiers, superconducting digital logiccircuits, and low-loss circuits for quantum computing. The currentstate-of-the-art approach for superconductor-insulator-superconductor (SIS)junction material is the Gurvitch trilayer process based on magnetronsputtering of Nb electrodes with Al-Oxide or AlN tunnel barriers grown on an Aloverlayer. However, a current limitation of elemental Nb-based circuits is thelow-loss operation of THz circuits operating above the 670 GHz gap frequency ofNb and operation at higher temperatures for projects with a strict powerbudget, such as space-based applications.  NbTiN is an alternative higher energy gap material and we have previouslyreported on the first NbTiN/AlN/NbTiNsuperconducting-insulating-superconducting (SIS) junctions with an epitaxiallygrown AlN tunnel barrier. One drawback of a directly grown tunnel barriercompared to thermal oxidation or plasma nitridation is control of the barrierthickness and uniformity across a substrate, leading to variations in currentdensity (Jc). Semiconductor barriers with smaller barrier heights enablethicker tunnel barriers for a given Jc. GaN is an alternative semiconductormaterial with a closed-packed Wurtzite crystal structure similar to AlN and itcan be epitaxially grown as a tunnel barrier using the Reactive Bias Target IonBeam Deposition (RBTIBD) technique. This work presents the preliminary resultsof the first reported high-quality NbTiN/GaN/NbTiN heterojunctions withunderdamped SIS I(V) characteristics.

SuperGaN: Synthesis of NbTiN/GaN/NbTiN Tunnel Junctions