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Quantum emitters in two-dimensional layered hexagonal boron nitride arequickly emerging as a highly promising platform for next-generation quantumtechnologies. However, precise identification and control of defects are keyparameters to achieve the next step in their development. We conducted acomprehensive study by analyzing over 10,000 photoluminescence emission lines,revealing 11 distinct defect families within the 1.6 to 2.2 eV energy range.This challenges hypotheses of a random energy distribution. We also reportedaveraged defect parameters, including emission linewidths, spatial density,phonon side bands, and the Debye-Waller factors. These findings providevaluable insights to decipher the microscopic origin of emitters in hBN hosts.We also explored the influence of hBN host morphology on defect familyformation, demonstrating its crucial impact. By tuning flake size andarrangement we achieve selective control of defect types while maintaining highspatial density. This offers a scalable approach to defect emission control,diverging from costly engineering methods. It highlights the importance ofinvestigating flake morphological control to gain deeper insights into theorigins of defects and to expand the spectral tailoring capabilities of defectsin hBN.

Large-Scale Statistical Analysis of Defect Emission in hBN: Revealing Spectral Families and Influence of Flakes Morphology