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Recently a Dark Matter-electron (DM-e) paradigm has drawn much attention.Models beyond the Standard Halo Model describing DM accelerated by high energycelestial bodies are under intense examination as well. In this letter, aVelocity Component Analysis method dedicated to swift analysis of AcceleratedDM-electron interactions via semiconductor detectors is proposed and the firstHPGe detector-based Accelerated DM-electron analysis is realized. Utilizing themethod, the first germanium based constraint on sub-GeV Solar ReflectedDM-electron interaction is presented with the 205.4 kg$\cdot$day dataset fromthe CDEX-10 experiment. In the heavy mediator scenario, the result excels inthe mass range of 5$-$15 keV/$c^2$, achieving a three orders of magnitudeimprovement comparing with previous semiconductor experiments. In the lightmediator scenario, the strongest constraint for DM lighter than 0.1 MeV/$c^2$is presented. The result proves the feasibility and demonstrates the vastpotential of the Velocity Component Analysis technique in future AcceleratedDM-electron analysis with semiconductor detectors.

Experimental Limits on Solar Reflected Dark Matter with a New Approach on Accelerated Dark Matter-Electron Analysis in Semiconductors