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Two-dimensional (2D) materials are popular candidates for emerging nanoscaledevices, including memristors. Resistive switching (RS) in such 2D materialmemristors has been attributed to the formation and dissolution of conductivefilaments created by the diffusion of metal ions between the electrodes.However, the area-scalable fabrication of patterned devices involves polymersthat are difficult to remove from the 2D material interfaces without damage.Remaining polymer residues are often overlooked when interpreting the RScharacteristics of 2D material memristors. Here, we demonstrate that theparasitic residues themselves can be the origin of RS. We emphasize thenecessity to fabricate appropriate reference structures and employ atomic-scalematerial characterization techniques to properly evaluate the potential of 2Dmaterials as the switching layer in vertical memristors. Ourpolymer-residue-based memristors exhibit RS typical for a filamentary mechanismwith metal ion migration, and their performance parameters are strikinglysimilar to commonly reported 2D material memristors. This reveals that theexclusive consideration of electrical data without a thorough verification ofmaterial interfaces can easily lead to misinterpretations about the potentialof 2D materials for memristor applications.

Non-Volatile Resistive Switching of Polymer Residues in 2D Material Memristors