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Metal halide perovskites (MHPs) are low-temperature processable hybridsemiconductor materials with exceptional performances that are revolutionizingthe field of optoelectronic devices. Despite their great potential, commercialdeployment is hindered by MHPs lack of stability and durability, mainlyattributed to ions migration and chemical interactions with the deviceelectrodes. To address these issues, 2D layered MHPs have been investigated aspossible device interlayers or active material substitutes to reduce ionmigration and improve stability. Here we consider the 2D perovskite PEA2PbBr4that was recently discussed as very promising candidate for X-ray directdetection. While the increased resilience of PEA2PbBr4 detectors have alreadybeen reported, the physical mechanisms responsible for such improvementcompared to the standard "3D" perovskites are not still fully understood. Tounravel the charge transport process in PEA2PbBr4 crystals thought to underlythe device better performance, we adapted an investigation technique previouslyused on highly resistive inorganic semiconductors, called photo induced currenttransient spectroscopy (PICTS). We demonstrate that PICTS can detect threedistinct trap states (T1, T2, and T3) with different activation energies, andthat the trap states evolution upon X-ray exposure can explain PEA2PbBr4superior radiation tolerance and reduced aging effects. Overall, our resultsprovide essential insights into the stability and electrical characteristics of2D perovskites and their potential application as reliable and direct X-raydetectors.

Radiation Hardness and Defects Activity in PEA2PbBr4 Single Crystals