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GeSn is nowadays recognized as a promising candidate to enable monolithicon-chip Si photonics operating in the near-infrared (NIR) and short-waveinfrared (SWIR) wavelengths. The addition of Sn to the Ge lattice induces ared-shift in the material bandgap, extending the absorption cut-off wavelengthtowards the infrared. In addition, above 7-9 at.% Sn, the GeSn alloy acquires adirect bandgap, enabling its use as active material in SWIR light-emittingdevices. Ge-rich GeSn alloys have been demonstrated in a plethora ofoptoelectronic devices including photodetectors, lasers and light emittingdiodes (LEDs). Furthermore, the high theoretical mobility of GeSn motivatedresearch for GeSn high-mobility field-effect transistors (FETs), while thepossibility of monolithic integration on Si platforms has also pushed theinvestigation of GeSn for on-chip thermoelectric applications. However, despitemore than 15 years of intensive research in the field, there exists nocommercial device to date based on GeSn. In fact, there are numerous challengeshindering the rise of this material for the next-generation (opto)electronics.Here, we give a concise review of the historical achievements in GeSn researchand the withstanding challenges. This is followed by a detailed description ofthe GeSn physical properties relevant for its use in optoelectronic devices. Weconclude with a discussion of the open questions in the field.

The GeSn Alloy and its Optoelectronic Properties: A Critical Review of the Current Understanding