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We demonstrate graded AlGaN/GaN heterojunction bipolar transistors (HBTs)with selective injection of minority carriers across a p-GaN base and patternedregrown base contacts. The selective injection design regulates minoritycarrier transport under emitter-base forward bias through a thin base region,while thick and highly doped p$^+$ GaN regrown layers patterned alongside thethin base regions are utilized to lower the base contact resistance. WithSiO$_2$ employed as a spacer between the emitter and the p$^+$ regrown layers,the device with an interdigitated emitter/base-contact stripe design displayeda maximum collector current density (I$_C$) of 101 kA/cm$^2$, a maximum currentgain ($\beta$) of 70 at I$_C$ $\sim$ 1 kA/cm$^2$ and $\sim$ 11 for I$_C$ $>$ 50kA/cm$^2$. The reported results demonstrate the potential of the selectiveinjection approach to break the long-existing HBT design tradeoff between baseresistance and current gain for next-generation radio frequency and mm-Waveapplications.

Selective injection AlGaN/GaN heterojunction bipolar transistors with patterned regrown base contacts