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Half-metallic Co-based full Heusler alloys have captured considerableattention of the researchers in the realm of spintronic applications, owing totheir remarkable characteristics such as exceptionally high spin polarizationat Fermi level, ultra-low Gilbert damping, and high Curie temperature. In thiscomprehensive study, employing density functional theory, we delve into thestability and electron transport properties of a magnetic tunneling junction(MTJ) comprising a Co$_2$MnSb/HfIrSb interface. Utilizing a standard modelgiven by Julliere, we estimate the tunnel magnetoresistance (TMR) ratio of thisheterojunction under external electric field, revealing a significantly highTMR ratio (500%) that remains almost unaltered for electric field magnitudes upto 0.5 V/A. In-depth investigation of K-dependent majority spin transmissionsuncovers the occurrence of coherent tunneling for the Mn-Mn/Ir interface,particularly when a spacer layer beyond a certain thickness is employed.Additionally, we explore the impact of bi-axial strain on the MTJ by varyingthe in-plane lattice constants between -4% and +4%. Our spin-dependenttransmission calculations demonstrate that the Mn-Mn/Ir interface manifestsstrain-sensitive transmission properties under both compressive and tensilestrain, and yields a remarkable three-fold increase in majority spintransmission under tensile strain conditions. These compelling outcomes placethe Co2MnSb/HfIrSb junction among the highly promising candidates for nanoscalespintronic devices, emphasizing the potential significance of the system in theadvancement of the field.

Coherent Tunneling and Strain Sensitivity of an All Heusler Alloy Magnetic Tunneling Junction: A First-Principles Study