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Emerging altermagnetic materials with vanishing net magnetizations and uniqueband structures have been envisioned as an ideal electrode to designantiferromagnetic tunnel junctions. Their momentum-resolved spin splitting inband structures defines a spin-polarized Fermi surface, which allowsaltermagnetic materials to polarize current as a ferromagnet, when the currentflows along specific directions relevant to their altermagnetism. Here, wedesign an Altermagnet/Insulator barrier/Ferromagnet junction, renamed asaltermagnetic tunnel junction (ATMTJ), using RuO$_2$/TiO$_2$/CrO$_2$ as aprototype. Through first-principles calculations, we investigate the tunnelingproperties of the ATMTJ along the [001] and [110] directions, which shows thatthe tunneling magnetoresistance (TMR) is almost zero when the current flowsalong the [001] direction, while it can reach as high as 6100\% with currentflows along the [110] direction. The spin-resolved conduction channels of thealtermagnetic RuO$_2$ electrode are found responsible for thismomentum-dependent (or transport-direction-dependent) TMR effect. Furthermore,this ATMTJ can also be used to readout the N\'{e}el vector of the altermagneticelectrode RuO$_2$. Our work promotes the understanding toward the altermagneticmaterials and provides an alternative way to design magnetic tunnel junctionswith ultrahigh TMR ratios and robustness of the altermagnetic electrode againstexternal disturbance, which broadens the application avenue forantiferromagnetic spintronic devices.

Crystal facet orientated Altermagnets for detecting ferromagnetic and antiferromagnetic states by giant tunneling magnetoresistance effect