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We consider a thin film of a topological insulator (TI) sandwiched betweentwo ferromagnetic (FM) layers. The system is additionally under an externalgate voltage. The surface electron states of TI are magnetized due to themagnetic proximity effect to the ferromagnetic layers. The magnetization offerromagnetic layers can be changed by applying an external magnetic field orby varying thickness of the topological insulator (owing to the interlayerexchange coupling). The change in the magnetic configuration of the systemaffects the transport properties of the surface electronic states. Using theGreen function formalism, we calculate spin polarization, anomalous Halleffect, and magnetoresistance of the system. We show, among others, that bytuning the gate voltage and magnetizations of the top and bottom FM layers, onecan observe the topological transition to the anomalous quantum Hall state.

Electronic and Topological Properties of a Topological Insulator Thin Film Sandwiched between Ferromagnetic Insulators