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Understanding the doping evolution from a Mott insulator to a superconductorprobably holds the key for resolving the mystery of unconventionalsuperconductivity in copper oxides. To elucidate the evolution of theelectronic state starting from the Mott insulator, we dose the surface of theparent phase Ca$_{2}$CuO$_{2}$Cl$_{2}$ by depositing one monolayer thin film ofRb atoms which are supposed to donate electrons to the CuO$_{2}$ planesunderneath. We successfully achieved the Rb thin films with periodicstructures, and the scanning tunneling microscopy or spectroscopy (STM or STS)measurements on the surface show that the Fermi energy is pinned within theMott gap but more close to the edge of the charge transfer band (CTB). However,the electron doping does not reduce the spectra weight of the upper Hubbardband (UHB) for the double occupancy as expected from the rigid model, butinstead increase it; meanwhile, further doping will create a new wide spread ingap states derivative from the UHB, and the Mott gap will be significantlydiminished. Our results provide new clues to understand the strong correlationeffect of parent Mott insulators for cuprates and shed new light on the originof high-temperature superconductivity.

Diminishing Mott gap by doping electrons through depositing one monolayer thin film of Rb on Ca$_{2}$CuO$_{2}$Cl$_{2}$