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Undoped and Si-doped GaN films were grown epitaxially on sapphire by reactiverf sputtering of GaAs (and Si) in Ar-N2 mixture. The resistivity of undoped GaNfilm grown at 100% N2 was ~2 x 105 {\Omega} cm, which reduced to ~1 {\Omega} cmin Si-doped film, revealing the effect of Si doping. With decrease of N2 from100% to 75%, the carrier concentration of Si-doped films increased from ~7 x1018 cm-3 to ~2 x 1019 cm-3, but remained practically unchanged as N2 wasdecreased to 20%, which is explained by effects due to saturation of Si dopingand increase of Ga interstitials as well as compensation by N interstitials andGa vacancies. Undoped and Si-doped films grown below 20% N2 displayed similarcarrier concentrations (~1020 cm-3), due to dominance of Ga interstitials. Bothundoped and Si-doped films were degenerate and displayed increase of mobilitywith carrier concentration and temperature, which was analyzed by the combinedeffect of ionized impurity and dislocation scattering, using compensation ratioas fitting parameter. At carrier concentrations below 1019 cm-3, the mobilitywas governed by both ionized impurity and dislocation scattering, while athigher carrier concentrations, ionized impurity scattering was found todominate, limited by compensation due to acceptors. In spite of the degeneratecharacter, the films displayed a small decrease of carrier concentration withtemperature, along with a nearly linear decrease of mobility, which areexplained by a marginal increase of compensation ratio with decrease oftemperature, taking into account the band edge fluctuation effects.

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films