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In the field of 2D materials, transition metal dichalcogenides (TMDs) aregaining attention for electronic applications. Our study delves into theH-phase monolayer VS$_2$ of the TMD family, analyzing its electronic structureand how strain affects its band structure using Density Functional Theory(DFT). Using a variety of computational methods, we provide an in-depth view ofthe electronic band structure. We find that strains between -5\% and +5\%significantly affect the energy gap, with uniaxial strains having a strongereffect than biaxial strains. Remarkably, compressive strains induce a phaseshift from semiconducting to metallic, associated with symmetry breaking andchanges in bond length. These findings not only deepen our understanding of theelectronic nuances of monolayer VS$_2$ under varying strains but also suggestpotential avenues for creating new electronic devices through strainengineering.

Electronic Phase Transformations and Energy Gap Variations in Uniaxial  and Biaxial Strained Monolayer VS$_2$ TMDs: A Comprehensive DFT and  Beyond-DFT Study