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To gain a deeper understanding of the luminescence of multiquantum wells andthe factors affecting it on a microscopic level, cathodoluminescence combinedwith scanning transmission electron microscopy and spectroscopy was used toreveal the luminescence of In0.15Ga0.85N five-period multiquantum wells. Thecomposition-wave-energy relationship was established in combination withenergy-dispersive X-ray spectroscopy , and the bandgaps of In0.15Ga0.85N andGaN in multiple quantum wells were extracted by electron energy lossspectroscopy to understand the features of cathodoluminescence luminescencespectra. The luminescence differences between different periods of multiquantumwells and the effects on the luminescence of multiple quantum wells owing todefects such as composition fluctuation and dislocations were revealed. Ourstudy establishing the direct correspondence between the atomic structure ofInxGa1-xN multiquantum wells and photoelectric properties, provides usefulinformation for nitride applications.

Nanoscale Cathodoluminescence Spectroscopy Probing the Nitride Quantum Wells in an Electron Microcope