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Amorphous VO$_x$ films without a hysteretic phase transition are stable withrespect to thermal cycling and highly demanded as sensitive elements of theresistive thermometers and microbolometers. In this paper we present simple andlow-temperature growth of amorphous vanadium oxide films by reactive electronbeam evaporation of vanadium metal in $\sim 10^{-4}$ mBar oxygen atmosphere.The temperature coefficient of the resistivity (TCR) of the films is weaklysensitive to substrate material and temperature and could be tuned by oxygenpressure in the growth chamber up to -2.2\% /K. The resistivity value is stablefor months. It depends on the substrate material and substrate temperatureduring the evaporation. Simplicity and controllability of the method shouldlead to various laboratory and industrial applications.

Amorphous VO$_x$ films with high temperature coefficient of the resistivity grown by reactive e-beam evaporation of V metal