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The growth of high-composition GeSn films of the future will likely be guidedvia algorithms. In this study we show how a logarithmic-based algorithm can beused to obtain high-quality GeSn compositions up to 16 % on GaAs (001)substrates via molecular beam epitaxy. Within we demonstrate compositiontargeting and logarithmic gradients to achieve linearly graded pseudomorphGe1-xSnx compositions up to 10 % before partial relaxation of the structure anda continued gradient to 16 % GeSn. Using algorithmic-based control andcalibration, the ability to consistently and easily grow GeSn compositionsabove 20 % will likely become very possible. In this report, we use X-raydiffraction, simulation and atomic force microscopy to analyze and demonstratesome of the possible growths that can be produced with the enclosed algorithm.This methodology of growth is a major step forward in the field of GeSndevelopment and the first demonstration of algorithmically driven linearlygraded high-quality GeSn films in the world.

Algorithm based linearly graded compositions of GeSn on GaAs (001) via molecular beam epitaxy