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Rare-earth nitrides, such as gadolinium nitride (GdN), have great potentialfor spintronic devices due to their unique magnetic and electronic properties.GdN has a large magnetic moment, low coercitivity and strong spin polarizationsuitable for spin transistors, magnetic memories and spin-based quantumcomputing devices. Its large spin splitting of the optical bandgap functions asa spin-filter that offers the means for spin-polarized current injection intometals, superconductors, topological insulators, 2D layers and other novelmaterials. As spintronics devices require thin films, a successfulimplementation of GdN demands a detailed investigation of the optical andmagnetic properties in very thin films. With this objective, we investigate thedependence of the direct and indirect optical bandgaps (Eg) of half-metallicGdN, using the trilayer structure AlN(10 nm)/GdN(t)/AlN(10 nm) for GdN filmthickness t in the ranging from 6 nm to 350 nm, in both paramagnetic (PM) andferromagnetic (FM) phases. Our results show a bandgap of 1.6 eV in the PMstate, while in the FM state the bandgap splits for the majority (0.8 eV) andminority (1.2 eV) spin states. As the GdN film becomes thinner the spin splitmagnitude increases by 60%, going from 0.290 eV to 0.460 eV. Our results pointto methods for engineering GdN films for spintronic devices.

Spin Splitting Tunable Optical Bandgap in GdN Thin Films for Spin Filtering