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The discoveries of two-dimensional ferromagnetism and magnetic semiconductorshighly enrich the magnetic material family for constructing spin-basedelectronic devices but with an acknowledged challenge that the Curietemperature (Tc) is usually far below room temperature. Many efforts such asvoltage control and magnetic ion doping are currently underway to enhance thefunctional temperature, in which the involvement of additional electrodes orextra magnetic ions limits their plenty of applications in practical devices.Here we demonstrate that the magnetic proximity, a robust effect but withelusive mechanisms, can induce room-temperature ferromagnetism at the interfacebetween sputtered Pt and semiconducting Fe3GeTe2, both of which do not showferromagnetism at 300 K. The independent electrical and magnetizationmeasurements, structure analysis, and control samples with Ta highlighting therole of Pt confirm that the ferromagnetism with the Tc of above 400 K arisesfrom the Fe3GeTe2/Pt interfaces, rather than Fe aggregation or other artificialeffects. Moreover, contrary to conventional ferromagnet/Pt structures, the spincurrent generated by the Pt layer is enhanced more than two times at theFe3GeTe2/Pt interfaces, indicating the potential applications of the uniqueproximity effect in building high-efficient spintronic devices. These resultsmay pave a new avenue to create room-temperature functional spin devices basedon low-Tc materials and provide clear evidences of magnetic proximity effectsby using non-ferromagnetic materials.

Proximity-induced interfacial room-temperature ferromagnetism in semiconducting Fe3GeTe2