English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$ keeps the recordsof colossal magnetoresistance (CMR) and angular magnetoresistance (AMR). Herewe report tuning the electronic transport properties via doping and pressure in(Mn$_{1-x}$Mg$_x$)$_3$Si$_2$Te$_6$. As the substitution of nonmagneticMg$^{2+}$ for magnetic Mn$^{2+}$, ferrimagnetic transition temperature $T_C$gradually decreases, while the resistivity increases significantly. At the sametime, the CMR and AMR are both enhanced for the low-doping compositions (e.g.,$x = 0.1$ and 0.2), which can be attributed to doping-induced broadening of theband gap and a larger variation range of the resistivity when undergoing ametal-insulator transition by applying a magnetic field along the $c$ axis. Onthe contrary, $T_C$ rises with increasing pressure due to the enhancement ofthe magnetic exchange interactions until a structural transition at $\sim$13GPa. Meanwhile, the activation gap is lowered under pressure and themagnetoresistance is decreased dramatically above 6 GPa where the gap isclosed. The results reveal that doping and pressure are effective methods totune the activation gap, and correspondingly, the CMR and AMR in nodal-linesemiconductors, providing an approach to investigate the magnetoresistancematerials for novel spintronic devices.

Gap and magnetic engineering via doping and pressure in tuning the colossal magnetoresistance in (Mn$_{1-x}$Mg$_x$)$_3$Si$_2$Te$_6$