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Membrane external-cavity surface-emitting lasers (MECSELs) are at theforefront of pushing the performance limits of vertically emittingsemiconductor lasers. Their simple idea of using just a very thin (hundreds ofnanometers to few microns) gain membrane opens up new possibilities throughuniform double side optical pumping and superior heat extraction from theactive area. Moreover, these advantages of MECSELs enable more complex band gapengineering possibilities for the active region by the introduction of multipletypes of quantum wells (QWs) to a single laser gain structure. In this paper,we present a new design strategy for laser gain structures with several typesof QWs. The aim is to achieve broadband gain with relatively high poweroperation and potentially a flat spectral tuning range. The emphasis in ourdesign is on ensuring sufficient gain over a wide wavelength range, havinguniform pump absorption, and restricted carrier mobility between the differentquantum wells during laser operation. A full-width half-maximum tuning range of> 70 nm (> 21.7 THz) with more than 125 mW of power through the entire tuningrange at room temperature is demonstrated.

Multi-type quantum well semiconductor membrane external-cavity surface-emitting lasers (MECSELs) for widely tunable continuous wave operation