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Silicon metal-oxide-semiconductor field effect transistors (MOSFETs)fabricated on a SIMOX (001) substrate, which is a kind of silicon on insulator(SOI) substrate, that is annealed at high temperature for a long time are knownto exhibit large valley splitting, but the origin of this splitting has longbeen unknown. Extended zone effective-mass approximation (EMA) predicts thatstrain significantly affects valley splitting. In this study, we analyzedvalley splitting based on this theory and found that the shear strain along<110> of approximately 5% near the buried oxide (BOX) interface is a promisingsource for large valley splitting.

Valley splitting by extended zone effective mass approximation incorporating strain in silicon