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One-dimensional graphene superlattice subjected to strong Kronig-Penney (KP)potential is promising for achieving electron lensing effect, while previousstudies utilizing the modulated dielectric gates can only yield a moderate,spatially dispersed potential profile. Here, we realize high KP potentialmodulation of graphene via nanoscale ferroelectric domain gating. Graphenetransistors are fabricated on PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ back-gatespatterned with periodic, 100-200 nm wide stripe domains. Due to bandreconstruction, the h-BN top-gating induces satellite Dirac points in sampleswith current along the superlattice vector $\hat{s}$, a feature absent insamples with current perpendicular to $\hat{s}$. The satellite Dirac pointposition scales with the superlattice period ($L$) as $\propto L^{\beta}$, with$\beta = -1.18 \pm 0.06$. These results can be well explained by the high KPpotential scenario, with the Fermi velocity perpendicular to $\hat{s}$ quenchedto about 1% of that for pristine graphene. Our study presents a promisingmaterial platform for realizing electron supercollimation and investigatingflat band phenomena.

Transport Anisotropy in One-dimensional Graphene Superlattice in the High Kronig-Penney Potential Limit