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Silicon photonics is a rapidly developing technology that promises torevolutionize the way we communicate, compute, and sense the world. However,the lack of highly scalable, native CMOS-integrated light sources is one of themain factors hampering its widespread adoption. Despite significant progress inhybrid and heterogeneous integration of III-V light sources on silicon,monolithic integration by direct epitaxial growth of III-V materials remainsthe pinnacle in realizing cost-effective on-chip light sources. Here, we reportthe first electrically driven GaAs-based multi-quantum-well laser diodes fullyfabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAsnano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells andInGaP passivation layers are grown with high quality at wafer scale, leveragingselective-area epitaxy with aspect-ratio trapping. After III-V facet patterningand standard CMOS contact metallization, room-temperature continuous-wavelasing is demonstrated at wavelengths around 1020 nm in more than three hundreddevices across a wafer, with threshold currents as low as 5 mA, output powersbeyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55{\deg}C. These results illustrate the potential of the III-V/Si nano-ridgeengineering concept for the monolithic integration of laser diodes in a Siphotonics platform, enabling future cost-sensitive high-volume applications inoptical sensing, interconnects and beyond.

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line