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$\alpha$-Sn is an elemental topological material, whose topological phasescan be tuned by strain and magnetic field. Such tunability offers a substantialpotential for topological electronics. However, InSb substrates, commonly usedto stabilize $\alpha$-Sn allotrope, suffer from parallel conduction,restricting transport investigations and potential applications. Here, thesuccessful MBE growth of high-quality $\alpha$-Sn layers on insulating, hybridCdTe/GaAs(001) substrates, with bulk electron mobility approaching 20000cm$^2$V$^{-1}$s$^{-1}$ is reported. The electronic properties of the samplesare systematically investigated by independent complementary techniques,enabling thorough characterization of the 3D Dirac (DSM) and Weyl (WSM)semimetal phases induced by the strains and magnetic field, respectively.Magneto-optical experiments, corroborated with band structure modeling, providean exhaustive description of the bulk states in the DSM phase. The modeledelectronic structure is directly observed in angle-resolved photoemissionspectroscopy, which reveals linearly dispersing bands near the Fermi level. Thefirst detailed study of negative longitudinal magnetoresistance relates thiseffect to the chiral anomaly and, consequently, to the presence of WSM.Observation of the $\pi$ Berry phase in Shubnikov-de Haas oscillations agreeswith the topologically non-trivial nature of the investigated samples. Ourfindings establish $\alpha$-Sn as an attractive topological material forexploring relativistic physics and future applications.

3D Topological Semimetal Phases of Strained $\alpha$-Sn on Insulating Substrate