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The spin phenomena observed at a clean metall-insulator interface aretypically reduced to Rashba-Edelstein effect, that leads to spin accumulationover a few monolayers. We demonstrate that the presence of interface disordersignificantly expands the range of potential phenomena. Specifically, the skewscattering at the metal - insulator boundary gives rise to the "kineticRashba-Edelstein effect", where spin accumulation occurs on a much largerlength scale comparable to mean free path. Moreover, at higher orders ofspin-orbit interaction, skew scattering is accompanied with spin relaxationresulting in the interface spin-Hall effect - a conversion of electricalcurrent to spin current at the metal surface. Unlike the conventional spin-Halleffect, this phenomenon persists even within the Born approximation. These twopredicted phenomena can dominate the spin density and spin current in devicesof intermediate thickness.

Interface disorder as a cause for kinetic Rashba-Edelstein effect and interface Spin-Hall effect at the metal-insulator boundary