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Using first-principles quantum-transport calculations, we investigatespin-dependent electronic and transport properties of antiferromagnetic tunneljunctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metalRuO$_{2}$ electrodes and an insulating TiO$_{2}$ tunneling barrier. We predictthe emergence of a giant tunneling magnetoresistance (TMR) effect in a wideenergy window, a series of barrier layer thicknesses, and different interfaceterminations, indicating the robustness of this effect. We show that thepredicted TMR cannot be explained in terms of the global transportspin-polarization of RuO$_{2}$ (110) but is well understood based on matchingthe momentum-dependent spin-polarized conduction channels of the two RuO$_{2}$(110) electrodes. We predict oscillations of TMR with increasing barrierthickness, indicating a non-negligible contribution from the perfectlyepitaxial interfaces. Our work helps the understanding of the physics of TMR inAFMTJs and aids in realizing efficient AFM spintronic devices.

Prediction of Giant Tunneling Magnetoresistance in RuO$_{2}$/TiO$_{2}$/RuO$_{2}$ (110) Antiferromagnetic Tunnel Junctions