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Impurity-bound excitons in ZnSe quantum wells are bright single photonemitters--a crucial element in photonics-based quantum technology. But toachieve the efficiencies required for practical applications, these emittersmust be integrated into optical cavities that enhance their radiativeproperties and far-field emission pattern. In this work, we demonstratecavity-enhanced emission from a single impurity-bound exciton in a ZnSe quantumwell. We utilize a bullseye cavity structure optimized to feature a small modevolume and a nearly Gaussian far-field transverse mode that can efficientlycouple to an optical fiber. The fabricated device displays emission that ismore than an order of magnitude brighter than bulk impurity-bound excitonemitters in the ZnSe quantum well, as-well-as clear anti-bunching, whichverifies the single photon emission from the source. Time-resolvedphotoluminescence spectroscopy reveals a Purcell-enhanced radiative decayprocess with a Purcell factor of 1.43. This work paves the way towards highefficiency spin-photon interfaces using an impurity-doped II-VI semiconductorcoupled to nanophotonics.

Cavity-enhanced single photon emission from a single impurity-bound exciton