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We show that thin layers of EuO, a ferromagnetic insulator, can be achievedby topotactic reduction under titanium of a Eu2O3 film deposited on top of agraphene template. The reduction process leads to the formation of a 7-nm thickEuO smooth layer, without noticeable structural changes in the underlyingchemical vapor deposited (CVD) graphene. The obtained EuO films exhibitferromagnetism, with a Curie temperature that decreases with the initiallydeposited Eu2O3 layer thickness. By adjusting the thickness of the Eu2O3 layerbelow 7 nm, we promote the formation of EuO at the very graphene interface: theEuO/graphene heterostructure demonstrates the anomalous Hall effect (AHE),which is a fingerprint of proximity-induced spin polarization in graphene. TheAHE signal moreover persists above Tc up to 350K due to a robustsuper-paramagnetic phase in EuO. This original high-temperature magnetic phaseis attributed to magnetic polarons in EuO: we propose that the high strain inour EuO films grown on graphene stabilizes the magnetic polarons up to roomtemperature. This effect is different from the case of bulk EuO in whichpolarons vanish in the vicinity of the Curie temperature Tc= 69K.

Room-Temperature Anomalous Hall Effect in Graphene in Interfacial Magnetic Proximity with EuO Grown by Topotactic Reduction